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103M1 KCA323EA PY1101F PY1101F 425F3XHM PE42820 D70F3033 6050G
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 SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
BU133
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DESCRIPTION *With TO-3 package *High voltage ,high speed APPLICATIONS *Intended for operating in color TV receiver's chopper supplies
PINNING (See Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION
Absolute maximum ratings(Ta= )
SYMBOL VCBO VCEO VEBO IC PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature TC=50 Open emitter Open base Open collector CONDITIONS MAX 750 250 7 3 30 200 -65~200 UNIT V V V A W
THERMAL CHARACTERISTICS
SYMBOL Rth j-mb PARAMETER Thermal resistance from junction to mounting base VALUE 2.33 UNIT /W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=0.1A ; IB=0 IE=10mA ; IC=0 IC=2A; IB=0.5A IC=2A; IB=0.5A VCB=750V; IE=0 VEB=7V; IC=0 IC=1A ; VCE=5V IC=0.2A ; VCE=10V 15 8 MIN 250 7
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BU133
SYMBOL VCEO(SUS) V(BR)EBO VCEsat VBEsat ICBO IEBO hFE fT
TYP.
MAX
UNIT V V
1.5 1.4 0.1 0.1 80
V V mA mA
MHz
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
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BU133
Fig.2 Outline dimensions
3


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